Paper
29 June 1998 Deep-UV reflection control for patterning dielectric layers
Ramkumar Subramanian, Gurjeet S. Bains, Christopher F. Lyons, Bhanwar Singh, Ernesto Gallardo
Author Affiliations +
Abstract
This paper describes the results of CD control studies on a dielectric layer that has both dense & isolated trenches and dense contact holes. Both top and bottom anti-reflective coatings were explored as well as the standard process without ARC. All wafers had a standard logic technology process flow and had been through Chemical-Mechanical Planarization prior to patterning. Stepper exposure conditions were varied in the form of partial coherence to obtain maximum depth of focus and exposure latitude. The results of this study were characterized in the form of a CD process window in which Exposure Dose was plotted vs. Defocus for all the 3 patterns i.e. dense & isolated trenches and dense contact holes. The effect of BARC etch was also explored.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ramkumar Subramanian, Gurjeet S. Bains, Christopher F. Lyons, Bhanwar Singh, and Ernesto Gallardo "Deep-UV reflection control for patterning dielectric layers", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310765
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KEYWORDS
Etching

Semiconducting wafers

Dielectrics

Reflection

Reflectivity

Deep ultraviolet

Optical lithography

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