Pulsed laser deposition of metal oxide films

Quanxi Jia

doi:10.1117/12.321615

14 September 1998 Pulsed laser deposition of metal oxide films

Quanxi Jia

Proceedings Volume 3343, High-Power Laser Ablation; (1998) https://doi.org/10.1117/12.321615
Event: High-Power Laser Ablation, 1998, Santa Fe, NM, United States

Abstract

Pulsed laser deposition (PLD), which provides very unique features compared to the conventional physical vapor deposition technique such as sputtering, is one of the most powerful techniques to deposit conductive oxide thin films. Over the past several years, we have optimized the processing conditions to deposit high quality conductive RuO₂ and SrRuO₃ thin films by PLD. We show that the substrate temperature during the deposition process plays an important role in determining the structural and electrical properties of these films. Epitaxial RuO₂ and SrRuO₃ thin films with a room-temperature resistivity of 35 (mu) (Omega) -cm and 280 (mu) (omega) -cm, respectively, have been successfully deposited by PLD.

Citation Download Citation

Quanxi Jia "Pulsed laser deposition of metal oxide films", Proc. SPIE 3343, High-Power Laser Ablation, (14 September 1998); https://doi.org/10.1117/12.321615

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