Logic design for field-effect quantum transistors

Victor I. Varshavsky; Masaaki Kosugi

doi:10.1117/12.312636

6 July 1998 Logic design for field-effect quantum transistors

Victor I. Varshavsky, Masaaki Kosugi

Proceedings Volume 3385, Photonic Quantum Computing II; (1998) https://doi.org/10.1117/12.312636
Event: Aerospace/Defense Sensing and Controls, 1998, Orlando, FL, United States

Abstract

Wave Function Rearrangement Quantum Devices (WFR QD) make it possible to create CMOS-like circuits. The major problem of logic design for WFR QD is providing logically inverting conductivity in the upper and lower quantum wells. It is shown that when the quantum wells have collinear conductivity, one quantum device correctly realizes only self-dual Boolean functions. A new configuration of WFR QD is suggested in which the upper and lower quantum wells have orthogonal conductivity. In this case, when extra separation and conjaction pads are incorporated, one WFR QD can realize an arbitrary Boolean function in the parallel-serial form.

Citation Download Citation

Victor I. Varshavsky and Masaaki Kosugi "Logic design for field-effect quantum transistors", Proc. SPIE 3385, Photonic Quantum Computing II, (6 July 1998); https://doi.org/10.1117/12.312636

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