Growth of epitaxial ZnSe and Cd1-xZnxTe films on (100)GaAs by laser ablation

Jean Louis Deiss; Jean-Luc Loison; Michele Robino

doi:10.1117/12.308639

26 May 1998 Growth of epitaxial ZnSe and Cd_1-xZn_xTe films on (100)GaAs by laser ablation

Jean Louis Deiss, Jean-Luc Loison, Michele Robino

Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308639
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France

Abstract

Epilayers of ZnSe and Cd_1-xZn_xTe have been deposited on (100)GaAs substrates by a pulsed laser deposition technique. The ZnSe target was a polycrystalline block of high purity and the different Cd_1-xZn_xTe targets were either polycrystalline or cold-pressed samples obtained by mixing the binary CdTe and ZnTe powders. The surface morphology, the crystalline and optical quality of these epilayers are investigated and compared to MOCVD- grown layers.

Citation Download Citation

Jean Louis Deiss, Jean-Luc Loison, and Michele Robino "Growth of epitaxial ZnSe and Cd_1-xZn_xTe films on (100)GaAs by laser ablation", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308639

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