Development of a high-performance e-beam resist suitable for advanced mask fabrication

Kazutaka Tamura; H. Niwa; S. Kanetsuki; M. Asano; S. Mitamura; Daichi Okuno; Masa-aki Kurihara; Naoya Hayashi

doi:10.1117/12.328813

1 September 1998 Development of a high-performance e-beam resist suitable for advanced mask fabrication

Kazutaka Tamura, H. Niwa, S. Kanetsuki, M. Asano, S. Mitamura, Daichi Okuno, Masa-aki Kurihara, Naoya Hayashi

Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328813
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan

Abstract

We developed a new positive E-beam resist, 'ERB'-900 MX for fabrication of advanced masks for the next generation. 'ERB'-900 MX is a non-chemically amplified resist based on novolak and naphthoquinonediazide. A newly designed additive and modification of the novolak resin contributed to improvement of sensitivity and resolution. There are two types of 'ERB'-900 MX, 'ERB'-900 MX(alpha) and MX(beta) whose solvents are different. Most important feature of 'ERB'-900 MX is highly sensitive. Especially, 'ERB'-900 MX(beta) showed excellent sensitivity of 3.5 (mu) C/cm² at 20 keV and 12 (mu) C/cm² at 50 keV. Stability of 'ERB'-900 MX after EB exposure was quite good. No practical change in sensitivity was observed for 12 hours in air and in vacuum. CD linearity of 'ERB'-900 MX(alpha) was around 0.75 micrometers for isolated patterns. CD bias for dry-etch process of 'ERB'-900 MX(alpha) is around 0.1micrometers which is comparable to that of 'ERB'-900 M-1. We confirmed that 'ERB'-900 MX has excellent performance suitable for fabrication of advanced masks.

Citation Download Citation

Kazutaka Tamura, H. Niwa, S. Kanetsuki, M. Asano, S. Mitamura, Daichi Okuno, Masa-aki Kurihara, and Naoya Hayashi "Development of a high-performance e-beam resist suitable for advanced mask fabrication", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328813

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KEYWORDS

Mask making

Critical dimension metrology

Photomasks

Photoresist processing

X-ray technology

Additive manufacturing

Phase shifts

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