Optimization of Zr-Si compound films for attenuated PSM

Takashi Haraguchi; Tadashi Matsuo; Susumu Takeuchi

doi:10.1117/12.328843

1 September 1998 Optimization of Zr-Si compound films for attenuated PSM

Takashi Haraguchi, Tadashi Matsuo, Susumu Takeuchi

Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328843
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan

Abstract

This paper reports optimization of Zirconium-Silicon-Oxide (ZrSiO) films for attenuated phase shift mask (Att.PSM) concerning Zr/Si compound ratio. ZrSiO films were deposited by RF magnetron co-sputtering in Ar mixed with O2 gas using separated dual cathode of Zr and Si. Researched were the relationships between chemical durabilities, optical property, and Zr/Si compound ratio determined with XPS analysis. As a result, it was confirmed that controllability of optical property, chemical durabilities, and spectroscopic property would be improved by optimizing Zr/Si compound ratio. Consequently, by composing appropriate optical constants and thickness of bi-layer ZrSiO films, various transmitting Att.PSM can be obtained.

Citation Download Citation

Takashi Haraguchi, Tadashi Matsuo, and Susumu Takeuchi "Optimization of Zr-Si compound films for attenuated PSM", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328843

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