8 October 1998Effect of nonradiative recombination coefficient and gain saturation parameter on second harmonic distortion in 1.55-μm InGaAsP semiconductor laser diodes
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In this study, different second harmonic distortion (2HD) levels of a 1.55 micrometers , InGaAsP ridge waveguide laser diode are investigated by using a mathematical model based on multi-mode rate equations. The rate equations with an input current i are solved numerically by using fourth order Runge-Kutta algorithm for frequencies ranging from 1 GHz to 10 GHz with 1 GHz steps and the standard parameter values. The important parameters of 1.55 micrometers . InGaAsP semiconductor lasers such as Auger recombination, non- radiative recombination, spontaneous emission lifetime and gain saturation are taken into account. The effects of some parameters on 2HD for different threshold levels are examined and computed graphically.
Fatih V. Celebi,M. Sadettin Ozyazici, andKenan Danisman
"Effect of nonradiative recombination coefficient and gain saturation parameter on second harmonic distortion in 1.55-μm InGaAsP semiconductor laser diodes", Proc. SPIE 3415, Laser Diodes and Applications III, (8 October 1998); https://doi.org/10.1117/12.326639
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Fatih V. Celebi, M. Sadettin Ozyazici, Kenan Danisman, "Effect of nonradiative recombination coefficient and gain saturation parameter on second harmonic distortion in 1.55-um InGaAsP semiconductor laser diodes," Proc. SPIE 3415, Laser Diodes and Applications III, (8 October 1998); https://doi.org/10.1117/12.326639