High-power BA Al-free InGaAsP/GaAs SCH SQW lasers

Baoxue Bo; Xin Gao; Baoshun Zhang; Baoren Zhu; Yuxia Wang; Xingde Zhang

doi:10.1117/12.319636

19 August 1998 High-power BA Al-free InGaAsP/GaAs SCH SQW lasers

Baoxue Bo, Xin Gao, Baoshun Zhang, Baoren Zhu, Yuxia Wang, Xingde Zhang

Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319636
Event: Photonics China '98, 1998, Beijing, China

Abstract

By using a recently modified LPE technique, extremely uniform InGaAsP/GaAs SCH SQW structure materials could be grown reproducibly. Single stripe lasers with 150 um emitting aperture generate 4.0 W in CW by improvement of waveguiding parameters and ohmic contact process.

Citation Download Citation

Baoxue Bo, Xin Gao, Baoshun Zhang, Baoren Zhu, Yuxia Wang, and Xingde Zhang "High-power BA Al-free InGaAsP/GaAs SCH SQW lasers", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319636

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