Effects of the lateral carrier diffusion on modulation response of ridge-structured QW laser

M. S. Torre; Ignacio Esquivias

doi:10.1117/12.358410

6 July 1999 Effects of the lateral carrier diffusion on modulation response of ridge-structured QW laser

M. S. Torre, Ignacio Esquivias

Proceedings Volume 3572, 3rd Iberoamerican Optics Meeting and 6th Latin American Meeting on Optics, Lasers, and Their Applications; (1999) https://doi.org/10.1117/12.358410
Event: 3rd Iberoamerican Optics Meeting and 6th Latin American Meeting on Optics, Lasers, and Their Applications, 1998, Cartagena de Indias, Colombia

Abstract

We analyze the influence of the lateral carrier diffusion on the modulation response including transport effects in ridge-waveguide multiple quantum well semiconductor lasers. It is found that the lateral carrier diffusion has a significant influence on the carrier spatial hole burning and the damping factor in the modulation response, but that the modulation bandwidth of ridge structure quantum well laser does no change.

Citation Download Citation

M. S. Torre and Ignacio Esquivias "Effects of the lateral carrier diffusion on modulation response of ridge-structured QW laser", Proc. SPIE 3572, 3rd Iberoamerican Optics Meeting and 6th Latin American Meeting on Optics, Lasers, and Their Applications, (6 July 1999); https://doi.org/10.1117/12.358410

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