Paper
6 July 1999 Photoluminescence study of quantum-wire arrays grown on vicinal (111)B GaAs substrate
Lyu Fan Zou, Sofia E. Acosta-Ortiz, LuXin Zou, Rafael Espinosa-Luna, G. A. Perez-Herrera, Luis Efrain Regalado
Author Affiliations +
Proceedings Volume 3572, 3rd Iberoamerican Optics Meeting and 6th Latin American Meeting on Optics, Lasers, and Their Applications; (1999) https://doi.org/10.1117/12.358427
Event: 3rd Iberoamerican Optics Meeting and 6th Latin American Meeting on Optics, Lasers, and Their Applications, 1998, Cartagena de Indias, Colombia
Abstract
Photoluminescence (PL) from (Al, Ga)As quantum-wire arrays grown on vicinal (111)B GaAs substrates by molecular beam epitaxy is reported for the first time. A peak at 1.826 eV is attributed to excitonic recombination in the built-in quantum-wire array, and a peak at 1.759 eV and a low PL emission band also originate from the serpentine superlattice structure. For comparison, the epilayers were also deposited on (100) GaAs substrates simultaneously. But the PL results indicate that they are the alloy-well structures. We explain these PL results with a model and draw a conclusion that steps on (111)B surface can play a very important role in crystal growth.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lyu Fan Zou, Sofia E. Acosta-Ortiz, LuXin Zou, Rafael Espinosa-Luna, G. A. Perez-Herrera, and Luis Efrain Regalado "Photoluminescence study of quantum-wire arrays grown on vicinal (111)B GaAs substrate", Proc. SPIE 3572, 3rd Iberoamerican Optics Meeting and 6th Latin American Meeting on Optics, Lasers, and Their Applications, (6 July 1999); https://doi.org/10.1117/12.358427
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KEYWORDS
Gallium arsenide

Luminescence

Superlattices

Solid state lighting

Aluminum

Chemical species

Crystals

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