High-performance InSb/In1-xAlxSb focal plane detector arrays grown by MBE

Andrew D. Johnson

doi:10.1117/12.344565

7 April 1999 High-performance InSb/In_1-xAl_xSb focal plane detector arrays grown by MBE

Andrew D. Johnson

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344565
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Results are presented for indium antimonide/indium aluminum antimonide (InSb/InAlSb) diodes grown by molecular beam epitaxy (MBE) for infrared detector applications. By lowering the substrate growth temperature during epitaxy it is possible to increase the dopant activation, both n and p-type. In addition, the Shockley-Read trap density is reduced by a factor X5 to approximately 2 X 10¹³ cm^-3 and the defect density in the MBE grown material falls to approximately 25 cm^-2. The application of these diodes with improved performance to 2D infrared detector arrays with enhanced detectivities operating at higher temperatures will be described. Conventional 2D arrays that operate at 80 K have also been fabricated. Typical noise equivalent temperature difference (NETD) is less than 10 mK for a 1.5 msec stare time.

Citation Download Citation

Andrew D. Johnson "High-performance InSb/In_1-xAl_xSb focal plane detector arrays grown by MBE", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344565

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