Revisiting F2 laser for DUV microlithography

Thomas Hofmann; Jean-Marc Hueber; Palash P. Das; Scott Scholler

doi:10.1117/12.354365

26 July 1999 Revisiting F₂ laser for DUV microlithography

Thomas Hofmann, Jean-Marc Hueber, Palash P. Das, Scott Scholler

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354365
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

A molecular fluorine laser, specifically tailored for photolithography needs, was developed. Single line operation at 157.6nm was achieved by means of a prism assembly. Laser operation at repetition rates up to 1 kHz without signs of power saturation results in an average power of 15W. The energy stability was equal to comparable ArF laser. Proper choice of materials and corona pre-ionization enabled gas lifetimes in line with current ArF laser technology, without any need for cryogenic purification.

Citation Download Citation

Thomas Hofmann, Jean-Marc Hueber, Palash P. Das, and Scott Scholler "Revisiting F₂ laser for DUV microlithography", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354365

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