Studies of nitride- and oxide-based materials as absorptive shifters for embedded attenuated phase-shifting mask in 193 nm

Cheng-ming Lin; Keh-wen Chang; Ming-der Lee; Wen-An Loong

doi:10.1117/12.354320

26 July 1999 Studies of nitride- and oxide-based materials as absorptive shifters for embedded attenuated phase-shifting mask in 193 nm

Cheng-ming Lin, Keh-wen Chang, Ming-der Lee, Wen-An Loong

Author Affiliations +

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354320
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Abstract-Five materials which are PdSi_xO_y, CrAl_xO_y, SiN_x, TiSi_xN_y, and TiSi_xO_yN_z as absorptive shifters for attenuated phase-shifting mask in 193 nm wavelength lithography are presented. PdSi_xO_y films were deposited by dual e-gun evaporation. CrAl_xO_y, TiSi_xN_y and TiSi_xO_yN_z films were formed by plasma sputtering and SiN_x films were formed with LPCVD. All of these materials are shown to be capable of achieving 4 percent - 15 percent transmittance in 193 nm with thickness that produce a 180 degrees phase shift. Under BCl₃:Cl₂ equals 14:70 sccm; chamber pressure 5 mtorr and RF power 1900W, the dry etching selectivity of TiSi_xN_y over DQN positive resist and fused silica, were found to be 2:1 and 4,8:1 respectively. An embedded layer TiSi_xN_y with 0.5 micrometers line/space was successfully patterned.

Citation Download Citation

Cheng-ming Lin, Keh-wen Chang, Ming-der Lee, and Wen-An Loong "Studies of nitride- and oxide-based materials as absorptive shifters for embedded attenuated phase-shifting mask in 193 nm", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354320

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