Optical studies of MOVPE-grown GaN layers

Mariusz Ciorga; Krzysztof Jezierski; Leszek Bryja; Jan Misiewicz; Regina Paszkiewicz; Ryszard Korbutowicz; Marek Panek; Bogdan Paszkiewicz; Marek J. Tlaczala; Ib Trabjerg

doi:10.1117/12.344728

8 April 1999 Optical studies of MOVPE-grown GaN layers

Mariusz Ciorga, Krzysztof Jezierski, Leszek Bryja, Jan Misiewicz, Regina Paszkiewicz, Ryszard Korbutowicz, Marek Panek, Bogdan Paszkiewicz, Marek J. Tlaczala, Ib Trabjerg

Author Affiliations +

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344728
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Photoluminescence and reflectance studies of MOVPE grown GaN samples were performed. From reflectance measurements optical constants were calculated by means of Kramers-Kronig analysis in the energy region 0 divided by 6 eV.

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Mariusz Ciorga, Krzysztof Jezierski, Leszek Bryja, Jan Misiewicz, Regina Paszkiewicz, Ryszard Korbutowicz, Marek Panek, Bogdan Paszkiewicz, Marek J. Tlaczala, and Ib Trabjerg "Optical studies of MOVPE-grown GaN layers", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344728

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