Application of As-S-Se chalcogenide inorganic resists in diffractive optics

Alexander V. Stronski

doi:10.1117/12.346789

29 April 1999 Application of As-S-Se chalcogenide inorganic resists in diffractive optics

Alexander V. Stronski

Proceedings Volume 3729, Selected Papers from International Conference on Optics and Optoelectronics '98; (1999) https://doi.org/10.1117/12.346789
Event: Selected Papers from the International Conference on Optics and Optoelectronics, 1998, Dehradun, India

Abstract

In present paper the lightsensitive properties and application in diffractive optics of As-S-Se inorganic resists are reviewed. Basic characteristics of As-S-Se layers are considered. Among them are optical properties, Raman spectra and their evolution under various treatments. Investigations of chemical properties have shown the good resistive properties of As-S-Se layers in various amine based etching solutions. The lightsensitivity properties (characteristic curves) are presented. The surface relief formation was investigated by means of numerical simulation and experimental investigations. Ways of optimizing media parameters, exposure and treatment processes are shown. Good mechanical strength and thermostability of As-S-Se layers enabled to use the obtained relief patterns after additional treatment for the production of high quality copies. Phase- relief holographic optical elements (HOE), recorded by using such resists, may be used as lithographic mask for the relief transfer into the substrates material by wet or dry etching, that enables to form HOE (Fresnel lenses, gratings) in glass, quartz, etc. Characteristics of the obtained holographic optical elements are examined. Diffraction efficiency values of the holographic gratings were close to the theoretical ones.

Citation Download Citation

Alexander V. Stronski "Application of As-S-Se chalcogenide inorganic resists in diffractive optics", Proc. SPIE 3729, Selected Papers from International Conference on Optics and Optoelectronics '98, (29 April 1999); https://doi.org/10.1117/12.346789

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