Critical dimension and oxide damage control during poly/polycide etching on a TCP9400SE using the SEERS plasma diagnostic system

Michel Derie

doi:10.1117/12.346238

23 April 1999 Critical dimension and oxide damage control during poly/polycide etching on a TCP9400SE using the SEERS plasma diagnostic system

Michel Derie

Author Affiliations +

Proceedings Volume 3742, Process and Equipment Control in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346238
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

The Self Exited Electron Resonance Spectroscopy is a new method of plasma characterization that gives access to collision rate, electron density, sheath width and bulk power. We used that method on a TCP9400SE for Poly/Polycide etching in order to optimize the CD control. To do that, we first checked all possible correlation's between the plasma parameters and the resulting effects on the wafers like side wall polymerization, CD gain, etchrate, oxide loss and oxide damage. Those results were first obtained on test wafers and were then rechecked on product wafers. Both series of experiments were consistent and allowed us to find the mechanism for the side wall polymers growth. Then we could identify the electron density value that gave the best CD control.

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Michel Derie "Critical dimension and oxide damage control during poly/polycide etching on a TCP9400SE using the SEERS plasma diagnostic system", Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); https://doi.org/10.1117/12.346238

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