Paper
1 January 1983 Reading And Writing Of Photochemical Holes Using GaAlAs Diode Lasers
P. Pokrowsky, W. E. Moerner, F. Chu, G. C. Bjorklund
Author Affiliations +
Proceedings Volume 0382, Optical Data Storage; (1983) https://doi.org/10.1117/12.970202
Event: Optical Data Storage, 1983, Incline Village, United States
Abstract
Photochemical holes are burnt and detected in the inhomogeneously broadened 833 nm zero phonon line of the R' color center in LiF using current tuned GaAlAs diode lasers.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Pokrowsky, W. E. Moerner, F. Chu, and G. C. Bjorklund "Reading And Writing Of Photochemical Holes Using GaAlAs Diode Lasers", Proc. SPIE 0382, Optical Data Storage, (1 January 1983); https://doi.org/10.1117/12.970202
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KEYWORDS
Semiconductor lasers

Crystals

Absorption

Hole burning spectroscopy

Combustion

Modulation

Optical storage

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