Ultrathin gate oxide degradation under different rates of charge injection

Pitsini Mongkolkachit; Bharat L. Bhuva; Sharad Prasad; N. Bui; Sherra E. Kerns

doi:10.1117/12.361348

27 August 1999 Ultrathin gate oxide degradation under different rates of charge injection

Pitsini Mongkolkachit, Bharat L. Bhuva, Sharad Prasad, N. Bui, Sherra E. Kerns

Proceedings Volume 3884, In-Line Methods and Monitors for Process and Yield Improvement; (1999) https://doi.org/10.1117/12.361348
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

The quasi-static degradation will exhibit identical shifts in parameters for identical total charge injection irrespective of the rate of injection. For this paper, three different injection rates were used to inject same total charge in identical devices. Unequal shift in device parameters for each experiment indicates non-quasi-static nature of degradation. As a result, DC stressing experiments can not be used to accurately predict AC degradation. A novel method of accelerating the stress along frequency dimension is proposed and experimental results are presented. This method can predict AC degradation for any frequency using an empirical model.

Citation Download Citation

Pitsini Mongkolkachit, Bharat L. Bhuva, Sharad Prasad, N. Bui, and Sherra E. Kerns "Ultrathin gate oxide degradation under different rates of charge injection", Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); https://doi.org/10.1117/12.361348

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