Development of Si-based hall sensor: effect of electrode geometry on hall voltage

Ruta Ghosalkar; Sarita Joshi; Shashi A. Gangal

doi:10.1117/12.369458

9 November 1999 Development of Si-based hall sensor: effect of electrode geometry on hall voltage

Ruta Ghosalkar, Sarita Joshi, Shashi A. Gangal

Proceedings Volume 3903, Indo-Russian Workshop on Micromechanical Systems; (1999) https://doi.org/10.1117/12.369458
Event: Indo-Russian Workshop on Micromechanical Systems, 1999, New Delhi, India

Abstract

Hall sensors place themselves in important position, in the fields right form scientific and research to the industrial and related applications. Various materials e.g. InSb, InAs, Si are reported for use even in commercially available Hall sensors. The use of Si, not only makes it possible to apply the highly developed and sophisticated batch production methods of integrated circuits to transducer field, but also makes it feasible to integrate sensor and signal processing circuits on a single chip.

Citation Download Citation

Ruta Ghosalkar, Sarita Joshi, and Shashi A. Gangal "Development of Si-based hall sensor: effect of electrode geometry on hall voltage", Proc. SPIE 3903, Indo-Russian Workshop on Micromechanical Systems, (9 November 1999); https://doi.org/10.1117/12.369458

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