Polarization-dependent optical gain characteristics of delta-strained quantum wells for semiconductor optical amplifiers

Yongsang Cho; Woo-Young Choi

doi:10.1117/12.391419

14 July 2000 Polarization-dependent optical gain characteristics of delta-strained quantum wells for semiconductor optical amplifiers

Yongsang Cho, Woo-Young Choi

Author Affiliations +

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391419
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Polarization sensitivity of quantum-well structures with delta-strained layers is investigated by numerical analysis. The effects of delta-strained layers on optical gains are very sensitive to the location and the number of the layers. Among the various structures investigated, the quantum well with two delta-strained layers has the least polarization sensitivity for wide wavelength and injected carrier density ranges.

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Yongsang Cho and Woo-Young Choi "Polarization-dependent optical gain characteristics of delta-strained quantum wells for semiconductor optical amplifiers", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391419

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