Fiber optic sensor for diffusible hydrogen determination in high-strength steel

Rodney D. Smith II; David L. Olson; Tom Wildeman; David K. Benson

doi:10.1117/12.380535

29 March 2000 Fiber optic sensor for diffusible hydrogen determination in high-strength steel

Rodney D. Smith II, David L. Olson, Tom Wildeman, David K. Benson

Proceedings Volume 3945, Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V; (2000) https://doi.org/10.1117/12.380535
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

With the increasing use of higher strength steels, the hydrogen content necessary to promote hydrogen assisted cracking (HAC) has become very small. This much lower hydrogen content level is approaching the uncertainty level of present diffusible hydrogen analytical practices, thus requiring the development of new analytical techniques. Efforts are being made to develop more sensitive and less time consuming methods for hydrogen measurement. An advanced design for a transition metal oxide based fiber optic diffusible hydrogen sensor has therefore been developed. The sensor allows measurement of hydrogen content directly from a welded structure, eliminating the need for duplicate welded coupons. The sensor generates the necessary analytical signal in less than one hour, and has been calibrated to yield results in ml H₂100 g weld metal. The sensor is also extremely sensitive to hydrogen and relatively inexpensive. The sensor shows excellent promise as an advanced hydrogen measurement technique, and research is continuing to establish procedures for transfer to industry.

Citation Download Citation

Rodney D. Smith II, David L. Olson, Tom Wildeman, and David K. Benson "Fiber optic sensor for diffusible hydrogen determination in high-strength steel", Proc. SPIE 3945, Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V, (29 March 2000); https://doi.org/10.1117/12.380535

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available