Analysis of 1/f noise in CMOS APS

Hui Tian; Abbas El Gamal

doi:10.1117/12.385433

15 May 2000 Analysis of 1/f noise in CMOS APS

Hui Tian, Abbas El Gamal

Proceedings Volume 3965, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications; (2000) https://doi.org/10.1117/12.385433
Event: Electronic Imaging, 2000, San Jose, CA, United States

Abstract

As CMOS technology scales, the effect of 1/f noise on low frequency analog circuits such as CMOS image sensors becomes more pronounced, and therefore must be more accurately estimated. analysis of 1/f noise is typically performed in the frequency domain even though the process is nonstationary. To find out if the frequency domain analysis produces acceptable results, the paper introduces a time domain method based on a nonstationary extension of a recently developed, and generally agreed upon physical model for 1/f noise in MOS transistors. The time domain method is used to analyze the effect of 1/f noise due to pixel level transistors in a CMOS APS. The results show that the frequency domain results can be quite inaccurate especially in estimating the 1/f noise effect of the reset transistor. It is also shown that CDS does not in general reduce the effect of the 1/f noise.

Citation Download Citation

Hui Tian and Abbas El Gamal "Analysis of 1/f noise in CMOS APS", Proc. SPIE 3965, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications, (15 May 2000); https://doi.org/10.1117/12.385433

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