Comparison of OPC rules and common process windows for 130-nm features using binary and attenuated phase-shift masks

Michael T. Reilly; Colin R. Parker; Karen Kvam; Robert John Socha; Mircea V. Dusa

doi:10.1117/12.388959

5 July 2000 Comparison of OPC rules and common process windows for 130-nm features using binary and attenuated phase-shift masks

Michael T. Reilly, Colin R. Parker, Karen Kvam, Robert John Socha, Mircea V. Dusa

Author Affiliations +

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.388959
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

DUV lithography using 248 nm light is a viable option for manufacturing deices with 130 nm features. A pertinent issue is generating an acceptable common process window for features of different pitches at this nominal dimension. Not only does the process latitude for any given pitch need to be acceptable; the bias in dose to size for these features must be minimized in order to create acceptable common process latitude. Demonstrated for pitch ratios of 1:1.5 and larger is the set-up of illumination, process OPC required to produce common process windows of 0.5 micrometers focus latitude at 10 percent EL. Simultaneously, scattering bars bring the isolated line process latitude to a level comparable to the 1:1.5 pitch features, greatly improving the performance over that of the isolated lines alone.

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Michael T. Reilly, Colin R. Parker, Karen Kvam, Robert John Socha, and Mircea V. Dusa "Comparison of OPC rules and common process windows for 130-nm features using binary and attenuated phase-shift masks", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388959

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