Computation for crosstalk effects in p-on-n Hg1-xCdxTe heterojunction IRFPA radiated by using uniformly parallel light

Hang-Ming Dai; Thomas J. Sanders

doi:10.1117/12.391749

17 July 2000 Computation for crosstalk effects in p-on-n Hg1-xCdxTe heterojunction IRFPA radiated by using uniformly parallel light

Hang-Ming Dai, Thomas J. Sanders

Author Affiliations +

Proceedings Volume 4028, Infrared Detectors and Focal Plane Arrays VI; (2000) https://doi.org/10.1117/12.391749
Event: AeroSense 2000, 2000, Orlando, FL, United States

Abstract

In our work, a three-dimensional IRFPA model has been constructed to conduct device simulations for drift-diffusion based Hg_1-xCd_xTe devices. The model uses the finite element method and numerical errors are automatically eliminated during computation. Computational results can thus easily achieve accuracy. The computer model was constructed by using C++ language. We have successfully represented simulation results in three-dimensional graphics. In this paper, a model for analyzing infrared-illuminated p-on-n photodiodes is presented. The computational results were verified analytically and experimentally. Furthermore, an IRFPA device model was built for calculating crosstalk by using uniformly collimated infrared radiation. Devices used for the model were linear FPAs. Ohmic contacts with zero bias were applied on electrodes. Other physics phenomena such as recombinations were also considered in the analyses. This model and simulation approach can provide an efficient way to reduce crosstalk in designing advanced MCT IRFPA devices.

Citation Download Citation

Hang-Ming Dai and Thomas J. Sanders "Computation for crosstalk effects in p-on-n Hg1-xCdxTe heterojunction IRFPA radiated by using uniformly parallel light", Proc. SPIE 4028, Infrared Detectors and Focal Plane Arrays VI, (17 July 2000); https://doi.org/10.1117/12.391749

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