Investigation of semiconductor nanocrystals by Raman scattering

Nikolay N. Melnik; T. N. Zavaritskaja; M. M. Rzaev; V. A. Karavanski; Vladimir A. Alekseev

doi:10.1117/12.378126

18 February 2000 Investigation of semiconductor nanocrystals by Raman scattering

Nikolay N. Melnik, T. N. Zavaritskaja, M. M. Rzaev, V. A. Karavanski, Vladimir A. Alekseev

Proceedings Volume 4069, Raman Scattering; (2000) https://doi.org/10.1117/12.378126
Event: Raman Scattering, 1998, Moscow, Russian Federation

Abstract

The spectra of Raman scattering and photoluminescence of porous Si, Ge, GaP and carbon nanocrystals are investigated at room temperature. The deduction that porous structures consist of isotropic nanoparticles, which have a crystalline kern is made. Using GaP as an example, it can be shown, that nanocrystals, obtained by an electrochemical etching have more perfect crystalline structure than the initial monocrystal. The interaction of phonon modes for nanocrystals create by an electrochemical etching of Si/Ge_xSi_1-x superlattices was observed. The intensive photoluminescence of graphite particles was observed.

Citation Download Citation

Nikolay N. Melnik, T. N. Zavaritskaja, M. M. Rzaev, V. A. Karavanski, and Vladimir A. Alekseev "Investigation of semiconductor nanocrystals by Raman scattering", Proc. SPIE 4069, Raman Scattering, (18 February 2000); https://doi.org/10.1117/12.378126

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