Paper
25 February 2000 Temperature study of absorption and photoluminescence spectra of CdSx Se1-x films grown on quartz substrate by pulse laser ablation technique
G. Perna, V. Capozzi, S. Pagliara, M. Ambrico
Author Affiliations +
Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000) https://doi.org/10.1117/12.378181
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy
Abstract
The optical properties of CdSxSe(subscript 1-x/ alloy films, deposited on quartz substrate by means of pulsed laser ablation technique, have been investigated by absorption and photoluminescence measurements as a function of the temperature. The absorption measurements, analyzed according to the Elliot theory, permit to obtain the temperature and composition dependence of the band gap, which are in good agreement with well known phenomenological models. The photoluminescence efficiency persisting up to room temperature is very interesting for device applications, because of the capability of tuning the emission line in the spectral region from green to red, by varying the sulphur concentration x.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Perna, V. Capozzi, S. Pagliara, and M. Ambrico "Temperature study of absorption and photoluminescence spectra of CdSx Se1-x films grown on quartz substrate by pulse laser ablation technique", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); https://doi.org/10.1117/12.378181
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KEYWORDS
Absorption

Luminescence

Cadmium sulfide

Phonons

Quartz

Sulfur

Laser ablation

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