(Ba0.5Sr0.5)TiO3 thin films prepared by excimer laser method for dynamic random access memory

Hao-shuang Gu; Guang Yang; Jie Zhu; You-qing Wang

doi:10.1117/12.408337

29 November 2000 (Ba_0.5Sr_0.5)TiO₃ thin films prepared by excimer laser method for dynamic random access memory

Hao-shuang Gu, Guang Yang, Jie Zhu, You-qing Wang

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408337
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

(Ba_0.5Sr_0.5)TiO₃ (BST) thin films have been deposited on Si(100) substrates by excimer laser (308 nm) ablation at 600 degree(s)C, the thickness of BST films is 400 nm. The capacitance-voltage characteristics and current-voltage characteristics of the BST films were studied. The dielectric constant of BST films is 300, and the dissipation factor is 0.015 at 1 MHz. The leakage current density is 2 X 10^-9 A/cm² at 2 V. The charge storage density is 35 fC/micrometers ² at an applied electric field of 0.125 MV/cm.

Citation Download Citation

Hao-shuang Gu, Guang Yang, Jie Zhu, and You-qing Wang "(Ba_0.5Sr_0.5)TiO₃ thin films prepared by excimer laser method for dynamic random access memory", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408337

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