Characteristics of reactive ion etching of indium nitride

Qixin Guo; Motoatsu Matsuse; Mitsuhiro Nishio; Hiroshi Ogawa

doi:10.1117/12.408432

29 November 2000 Characteristics of reactive ion etching of indium nitride

Qixin Guo, Motoatsu Matsuse, Mitsuhiro Nishio, Hiroshi Ogawa

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408432
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

We have studied the characteristics of reactive ion etching of indium nitride, using CH₄ and H₂ gases. The effects of CH₄/H₂ gas composition and total gas pressure on the etching rates were investigated. It was found that variation of CH₄ concentration in gas mixtures leads to changes in both the etching rate and the surface morphology. Smooth etched InN surface with the rate of around 610 approximately 710 angstroms/min was obtained in the range of 5 approximately 15% CH₄ concentration and 25 approximately 55 Pa pressure.

Citation Download Citation

Qixin Guo, Motoatsu Matsuse, Mitsuhiro Nishio, and Hiroshi Ogawa "Characteristics of reactive ion etching of indium nitride", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408432

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