Paper
26 October 2000 AlGaN/GaN ultraviolet photodetectors
Joe C. Campbell, Ting Li, Shuling Wang, Ariane L. Beck, Charles J. Collins, Bo Yang, Damien J. H. Lambert, Russell D. Dupuis, John C. Carrano, Matthew J. Schurman, Ian T. Ferguson
Author Affiliations +
Abstract
The detection of light in the ultraviolet (UV) portion of the electromagnetic spectrum is critical to a number of commercial and military applications. Until very recently, the primary means of light detection in the UV was with either silicon photodiodes or photomultiplier tubes, both of which have serious drawbacks. With the advent of optoelectronic devices fabricated in the ternary alloy of AlGaN, the possibility exists to produce high- performance solid-state photodetector arrays that are sensitive to the visible-blind and solar-blind regions of the spectrum. In this paper, we discuss recent advances in the area of ultraviolet photodetectors fabricated on GaN and AlGaN.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joe C. Campbell, Ting Li, Shuling Wang, Ariane L. Beck, Charles J. Collins, Bo Yang, Damien J. H. Lambert, Russell D. Dupuis, John C. Carrano, Matthew J. Schurman, and Ian T. Ferguson "AlGaN/GaN ultraviolet photodetectors", Proc. SPIE 4134, Photonics for Space Environments VII, (26 October 2000); https://doi.org/10.1117/12.405335
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KEYWORDS
Ultraviolet radiation

Gallium nitride

Photodetectors

Photodiodes

Quantum efficiency

Resistance

PIN photodiodes

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