Fast yield learning using e-beam wafer inspection

James F. Garvin Jr.; Richard L. Guldi; Nagarajan Sridhar; Mark Tinker; Robert Cappel; Thomas Cass; Jake Roberts

doi:10.1117/12.404864

23 October 2000 Fast yield learning using e-beam wafer inspection

James F. Garvin Jr., Richard L. Guldi, Nagarajan Sridhar, Mark Tinker, Robert Cappel, Thomas Cass, Jake Roberts

Proceedings Volume 4229, Microelectronic Yield, Reliability, and Advanced Packaging; (2000) https://doi.org/10.1117/12.404864
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

We report examples of the use of automated e-beam inspection to detect yield or reliability limiting defects which were not seen using conventional optical inspection. In SEM-mode, e-beam inspection affords high resolution and large depth- of-focus to defect detection, making it well suited to inspect sub-0.15 micrometers geometries, even in high aspect ratio structures. This technology can find defects smaller than 0.10micrometers , even on densely packed, high aspect ratio, multi- layer geometries. Moreover, with the high signal-to-noise ratio inherent in SEMSpec technology, defects that are difficult to inspect optically later in the fabrication process due to grainy polysilicon, grainy metal, underlying structural variations, or dielectric thickness non- uniformity causing color changes, etc are easily observed. Another advantage of SEMSpec inspection is the voltage contrast operating mode, which detects electrical failures/defects not visible by optical techniques.

Citation Download Citation

James F. Garvin Jr., Richard L. Guldi, Nagarajan Sridhar, Mark Tinker, Robert Cappel, Thomas Cass, and Jake Roberts "Fast yield learning using e-beam wafer inspection", Proc. SPIE 4229, Microelectronic Yield, Reliability, and Advanced Packaging, (23 October 2000); https://doi.org/10.1117/12.404864

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