Modification of the optical and electronics parameters in a-Si:H as a result of annealing with CO2 laser radiation

A. Grabowski; Marian Nowak

doi:10.1117/12.405973

2 November 2000 Modification of the optical and electronics parameters in a-Si:H as a result of annealing with CO₂ laser radiation

A. Grabowski, Marian Nowak

Author Affiliations +

Proceedings Volume 4238, Laser Technology VI: Applications; (2000) https://doi.org/10.1117/12.405973
Event: Laser Technology VI, 1999, Szczecin, Poland

Abstract

Thin film of hydrogenated amorphous silicon (a-Si:H) were annealed using CO₂ laser radiation ((lambda) equals10,6 micrometers ). The influence of this laser treatment on spectral dependencies of real part of refractive index and absorption coefficient of light in a-Si:H are presented. The values of energy gap have decreased while the Urbach energy increased after CO₂ laser annealing of a-Si:H. The conductivity and photoconductivity of the annealed material have decreased. The power coefficient of the light intensity dependence of photoconductivity has also changed. The influence of CO₂ laser irradiation on the energetic distribution of electron states of a a-Si:H is reported.

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A. Grabowski and Marian Nowak "Modification of the optical and electronics parameters in a-Si:H as a result of annealing with CO₂ laser radiation", Proc. SPIE 4238, Laser Technology VI: Applications, (2 November 2000); https://doi.org/10.1117/12.405973

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