Paper
9 July 2001 Temperature-dependent operation of GaInAsP/InP VCSELs
Carl J. Hepburn, Russell Sceats, Adrian Boland-Thoms, Naci Balkan, A. J. Dann, Simon D. Perrin, Ian Read, J. Reed, P. Cannard, Michael A. Fisher, D. J. Elton, M. Harlow
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Abstract
We present the results of our studies concerning the pulsed operation of a bulk GaInAsP/InP vertical cavity surface emitting laser (VCSEL). The device is tailored to emit at around 1.5 micrometers at room temperature. The structure has a 45-period n-doped GaInAsP/InP bottom Distributed Bragg Reflector (DBR), and a 4 period Si/Al2O3 dielectric top reflector defining a 3-(lambda) cavity. Electroluminescence from a 16micrometers diameter top window was measured in the pulsed injection mode. Spectral measurements were recorded in the temperature range between 125K and 240K. Lasing threshold current density has a broad minimum at temperatures between 170K-190K. In order to establish the relationship between the temperature dependence of the threshold current and the gain peak, we investigated the spectral dependence of edge and surface emission from optically pumped structures without the top reflector. Experimental result are compared with existing theories concerning the temperature dependence of threshold current.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carl J. Hepburn, Russell Sceats, Adrian Boland-Thoms, Naci Balkan, A. J. Dann, Simon D. Perrin, Ian Read, J. Reed, P. Cannard, Michael A. Fisher, D. J. Elton, and M. Harlow "Temperature-dependent operation of GaInAsP/InP VCSELs", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432618
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KEYWORDS
Vertical cavity surface emitting lasers

Luminescence

Reflectivity

Refractive index

Temperature metrology

Cladding

Reflectors

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