Encapsulated inorganic resist technology applied to 157-nm lithography

Theodore H. Fedynyshyn; Roger F. Sinta; Michael Sworin; Russell B. Goodman; Scott P. Doran; I. Sondi; Egon Matijevic

doi:10.1117/12.436860

24 August 2001 Encapsulated inorganic resist technology applied to 157-nm lithography

Theodore H. Fedynyshyn, Roger F. Sinta, Michael Sworin, Russell B. Goodman, Scott P. Doran, I. Sondi, Egon Matijevic

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436860
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

In order to increase plasma etch selectivity in traditional single layer organic resists SiO₂ nanoparticles have been added to typical 248nm resist formulations. Formulation modifications are necessary due to the dissolution acceleration effect of the particles. Surface functionalization of the nanoparticle surfaces with organic groups lessens this effect and allows the inclusion of acid labile groups. This allows for a wider formulation window and limits unexposed film thickness losses (UFTL). Both t- butyl ester groups and poly(t-butyl acrylate) have been used to achieve this effect. Encapsulated inorganic resist technology (EIRT) can be used as a single layer hard mask compatible with existing resist processing steps and replace complex and costly multilevel resist approaches. Lithogrpahic evaluations have been performed with electron beam, and with 248nm and 157nm projection systems. Greater transparency at 157nm is achieved by the addition of these materials, thus enabling the use of thicker films. High resolution imaging is demonstrated at these wavelengths.

Citation Download Citation

Theodore H. Fedynyshyn, Roger F. Sinta, Michael Sworin, Russell B. Goodman, Scott P. Doran, I. Sondi, and Egon Matijevic "Encapsulated inorganic resist technology applied to 157-nm lithography", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436860

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