Paper
26 November 1983 Pb1-xSnxTe Lasers With High Efficiencies
Koji Shinohara, Yoshito Nishijima, Hirokazu Fukuda
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Abstract
Internal quantum efficiencies of Pb Sn Te lasers with double-hetero geometries have been estimated. The efficiencies of conventional PbTe/PbSnTe/PbTe lasers are very low and far from the efficiencies which are limited by Auger-recombination mechanism. The main cause of low efficiency is thought to be due to the misfit dislocations at the PbTe-PbSnTe hetero-interface. To reduce the misfit dislocations, lattice-matched PbTeSe/PbSnTe/PbTeSe lasers are prepared and they show considerable improvements. However, due to the difficulty of cleaving of PbTeSe layers, the efficiencies are not sufficient. By designing a one-side-lattice-matched PbTeSe/PbSnTe/PbTe structure, the lasers whose efficiencies are very close to the theoretical limit can be prepared.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Koji Shinohara, Yoshito Nishijima, and Hirokazu Fukuda "Pb1-xSnxTe Lasers With High Efficiencies", Proc. SPIE 0438, Tunable Diode Laser Development and Spectroscopy Applications, (26 November 1983); https://doi.org/10.1117/12.937422
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Cited by 3 scholarly publications.
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KEYWORDS
Internal quantum efficiency

Laser damage threshold

Lead

Tellurium

Quantum efficiency

Semiconductor lasers

Interfaces

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