Paper
17 April 2001 Electrical and photoelectrical behavior of Au/n-CdTe junctions
Zsolt J. Horvath, V. P. Makhniy, Istvan Reti, M. V. Demych, Vo Van Tuyen, P. M. Gorley, Janos Balazs, Kostyantyn S. Ulyanitsky, L. Dozsa, P. P. Horley, Balint Podor
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Abstract
The electrical and photo electrical behavior of Au/n-CdTe junctions prepared no CdTe mono crystalline substrates were studied. Both properties depended strongly on the parameters of the compensated high-resistive layer at the CdTe surface formed by annealing in air during preparation.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zsolt J. Horvath, V. P. Makhniy, Istvan Reti, M. V. Demych, Vo Van Tuyen, P. M. Gorley, Janos Balazs, Kostyantyn S. Ulyanitsky, L. Dozsa, P. P. Horley, and Balint Podor "Electrical and photoelectrical behavior of Au/n-CdTe junctions", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425442
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KEYWORDS
Diodes

Annealing

Aluminum

Temperature metrology

Bismuth

Capacitance

Crystals

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