Proton and H+-ion radiation effect on intersubband transition in GaAs/AlGaAs multiple quantum wells

Yosief Berhane; M. Omar Manasreh; B.D. Weaver; H.H. Tan; Chennupati Jagadish

doi:10.1117/12.448163

12 November 2001 Proton and H⁺-ion radiation effect on intersubband transition in GaAs/AlGaAs multiple quantum wells

Yosief Berhane, M. Omar Manasreh, B.D. Weaver, H.H. Tan, Chennupati Jagadish

Proceedings Volume 4454, Materials for Infrared Detectors; (2001) https://doi.org/10.1117/12.448163
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Intersubband transition in 3-Me He⁺-ion or 1 MeV proton irradiated GaAs/AlGaAs multiple quantum wells were studied using optical absorption technique. The intersubband transitions in 3MeV He⁺-ion irradiated were completely depleted in samples irradiated with doses as low as 1 X 10¹⁴ cm^-2. Thermal annealing recovery of intersubband transitions was observed in samples irradiated with lower doses while in heavily irradiated samples intersubband transition show no annealing recovery which could be said irradiation induced defects are so severe that annealing temperature could not repair the damage. On the other hand, intersubband transitions in 1 MeV proton irradiated samples were completely depleted with irradiation doses as low as 4 X 10¹⁴ cm^-2. More than 80 percent recovery was achieved at annealing temperature as low as 650 degrees C. The total integrated area and peak position energy of un-irradiated and irradiated samples were monitored as a function of annealing temperature. Depletion recovery here is noted to depend on the thermal annealing and irradiation dose.

Citation Download Citation

Yosief Berhane, M. Omar Manasreh, B.D. Weaver, H.H. Tan, and Chennupati Jagadish "Proton and H⁺-ion radiation effect on intersubband transition in GaAs/AlGaAs multiple quantum wells", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); https://doi.org/10.1117/12.448163

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