Nanoscale-level dielectric property image of low-k dielectric materials for copper metallization using energy-filtered TEM

Shen-Chuan Lo; Fu-Rong Chen; Ji-Jung Kai; Li-Chien Chen; Li Chang; Cheng-Cheng Chiang; Peijun Ding; Barry Chin; Fusen E. Chen

doi:10.1117/12.452549

27 December 2001 Nanoscale-level dielectric property image of low-k dielectric materials for copper metallization using energy-filtered TEM

Shen-Chuan Lo, Fu-Rong Chen, Ji-Jung Kai, Li-Chien Chen, Li Chang, Cheng-Cheng Chiang, Peijun Ding, Barry Chin, Fusen E. Chen

Author Affiliations +

Proceedings Volume 4468, Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing; (2001) https://doi.org/10.1117/12.452549
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

The dielectric properties of low-k material have been characterized using image-spectrum technique via Kramers- Kronig analysis. Quantitative analysis of experimental image-spectrum has been improved using two new quantitative methods. FFT interpolation and maximum entropy deconvolution were successfully used to solve the two problems: under- sampling and loss of energy resolution in image-spectrum technique, respectively. In this study, carbonated SiO₂ based low-k dielectric layer designed for copper metallization was used as a demo example. We show that the reconstructed image-spectrum obtained from ESI series images can be quantified with the same accuracy as conventional EELS spectrum. We also developed a new method to quantitatively determine dielectric constant for low-k materials. We have determined the thickness of the carbonated SiO₂ based low-k material using extrapolated thickness method from the materials of known dielectric constants. The dielectric function map can be deduced from 2-dimensional reconstructed single scattering spectra with providing the information of thickness via Kramers-Kronig analysis. We proposed a four-dimensional data presentation for revealing the uniformity of the energy dependent property. The accuracy of our methods depends on the thickness determination and on the quality of the reconstructed spectra from the image series. Finally, the dielectric property of carbonated SiO₂ based low-k material after annealed process was investigated using Kramers-Kronig analysis to found the relationship of dielectric constant and material density.

Citation Download Citation

Shen-Chuan Lo, Fu-Rong Chen, Ji-Jung Kai, Li-Chien Chen, Li Chang, Cheng-Cheng Chiang, Peijun Ding, Barry Chin, and Fusen E. Chen "Nanoscale-level dielectric property image of low-k dielectric materials for copper metallization using energy-filtered TEM", Proc. SPIE 4468, Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing, (27 December 2001); https://doi.org/10.1117/12.452549

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available