Dynamics of interface traps in bonded silicon wafers

Sina Khorasani; Alireza Motieifar; Bizhan Rashidian

doi:10.1117/12.444987

19 October 2001 Dynamics of interface traps in bonded silicon wafers

Sina Khorasani, Alireza Motieifar, Bizhan Rashidian

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444987
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

In this article, a time-domain non-linear model is proposed for quantum dynamics of interface traps. This model includes the effects of thermoionic emission, combined with the drift and tunneling currents. The model is simplified for the case of interface traps of the directly bonded Silicon wafers, and linearized. Therefore, an equivalent electrical circuit is obtained being composed of two resistive and capacitive branches. The theory predicts a close spacing between the corresponding zero and pole in the frequency response of the system, being justified by experiment on directly bonded n- type Silicon wafers. The low frequency response to a square- wave is quite in agreement with the experiment. This method enables one to precisely measure the filling up time- constant of the interface traps through the falling electroncs from the conduction band, by measuring the frequency response of the interface.

Citation Download Citation

Sina Khorasani, Alireza Motieifar, and Bizhan Rashidian "Dynamics of interface traps in bonded silicon wafers", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444987

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