Influence of coma effect on scanner overlay

Jieh-Jang Chen; Chen-Ming Huang; Fan-Jia Shiu; Ching-Sen Kuo; S. C. Fu; C. T. Ho; Chung Wang; J. H. Tsai

doi:10.1117/12.473467

16 July 2002 Influence of coma effect on scanner overlay

Jieh-Jang Chen, Chen-Ming Huang, Fan-Jia Shiu, Ching-Sen Kuo, S. C. Fu, C. T. Ho, Chung Wang, J. H. Tsai

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473467
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

As the increasing demand of thinner CD for higher IC density and faster signal response, the techniques, such as OPC, PSM, and OAI was introduced to extend the optical resolution-limit below sub-100-nano. The lens quality is more important as critical dimension (CD) becomes smaller even using scanner instead of stepper. Pattern displacement error (PDE) resulting from lens aberration will be a phenomenon worthy to emphasize when technology design rules reaches sub-quarter micron generation and beyond1, 2. Because of inevitable coma aberration of lens, conventional 2úgm bar-in-bar overlay pattern cannot accurately represent real displacement of fine patterns in device. In this paper, evaluation of overlay pattern displacement with respect to lens coma aberration and its dependence on different feature size and structure are carried out. Different generation technology should combine with overlay pattern of proper feature size. Several illumination methodologies and NA/Sigma setting are also discussed in this paper.

Citation Download Citation

Jieh-Jang Chen, Chen-Ming Huang, Fan-Jia Shiu, Ching-Sen Kuo, S. C. Fu, C. T. Ho, Chung Wang, and J. H. Tsai "Influence of coma effect on scanner overlay", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473467

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