AttPSM CD control: mask bias and flare effects

Young-Chang Kim; Geert Vandenberghe; Kurt G. Ronse

doi:10.1117/12.474482

30 July 2002 AttPSM CD control: mask bias and flare effects

Young-Chang Kim, Geert Vandenberghe, Kurt G. Ronse

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474482
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Small MEEF is important as well as a large process window to control dense line CD variation. The MEEF and the process window are both strong functions of mask bias. In this study, MEEF and process windows were analyzed mainly with 100nm node dense lines with varied mask bias using 9% attPSM and conventional binary mask. Illumination influences were also analyzed. Flare is one of the big concerns of the lithographic performance, but its influences are not well understood. Long range flare was also studied in terms of CD control. Flare definitely reduces the process window, but has no influence on MEEF. A systematic analysis was done in order to explain the results.

Citation Download Citation

Young-Chang Kim, Geert Vandenberghe, and Kurt G. Ronse "AttPSM CD control: mask bias and flare effects", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474482

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