Atomic scale structure-property relationships of defects and interfaces in novel oxide thin films

Susanne Stemmer

doi:10.1117/12.455838

7 November 2002 Atomic scale structure-property relationships of defects and interfaces in novel oxide thin films

Susanne Stemmer

Proceedings Volume 4811, Superconducting and Related Oxides: Physics and Nanoengineering V; (2002) https://doi.org/10.1117/12.455838
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

The ability to analyze the chemistry, atomic and electronic structure of interfaces with atomic spatial resolution is afforded by modern scanning transmission electron microscopy techniques. By combining atomic resolution imaging with spectroscopy, structure-property relationships of functional oxide thin films can be established. In this paper, we describe two specific examples where we have applied high-spatial resolution electron energy-loss spectroscopy to dielectric thin films.

Citation Download Citation

Susanne Stemmer "Atomic scale structure-property relationships of defects and interfaces in novel oxide thin films", Proc. SPIE 4811, Superconducting and Related Oxides: Physics and Nanoengineering V, (7 November 2002); https://doi.org/10.1117/12.455838

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available