Femtosecond laser micromachining of silicon for MEMS

Mohammed El-Bandrawy; Mool C. Gupta

doi:10.1117/12.479556

17 October 2003 Femtosecond laser micromachining of silicon for MEMS

Mohammed El-Bandrawy, Mool C. Gupta

Proceedings Volume 4977, Photon Processing in Microelectronics and Photonics II; (2003) https://doi.org/10.1117/12.479556
Event: High-Power Lasers and Applications, 2003, San Jose, CA, United States

Abstract

Laser micromachining of n-type silicon wafer was studied using femtosecond laser operating at 400 and 800 nm wavelengths. The fundamental wavelength was used to fabricate a diaphragm of 4 mm diameter using a computer controlled galvo head. The laser pulsewidth was 110 fs, repetition rate of 1 kHz, and maximum average power of 2 W. The experiments were done in air and in vacuum environment. The samples were examined with optical microscope and surface profilometer. Experiments were also done with doubling the laser beam frequency using LBO crystal to get 400 nm wavelength. Using a 10 nm resolution stage, high numerical aperture microscope objective, we were able to fabricate 235 nm wide lines with 600 nm depth.

Citation Download Citation

Mohammed El-Bandrawy and Mool C. Gupta "Femtosecond laser micromachining of silicon for MEMS", Proc. SPIE 4977, Photon Processing in Microelectronics and Photonics II, (17 October 2003); https://doi.org/10.1117/12.479556

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available