Picosecond time scale spin-polarized electron kinetics in thin semiconductor layers

K. Aulenbacher; J. Schuler; D. V. Harrach; E. Reichert; J. Roethgen; Arsen V. Subashiev; V. Tioukine; Yuri P. Yashin

doi:10.1117/12.514461

11 June 2003 Picosecond time scale spin-polarized electron kinetics in thin semiconductor layers

K. Aulenbacher, J. Schuler, D. V. Harrach, E. Reichert, J. Roethgen, Arsen V. Subashiev, V. Tioukine, Yuri P. Yashin

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514461
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Time resolved photoemission of highly spin-polarized electrons from thin strained and unstrained GaAs_xP_1-x films of various thicknesses has been investigated. An upper limit for the response time of a photocathode has been found to be 1 ps for layer thicknesses less than 150 nm. We show that the electron depolarization during the electron extraction to the surface band bending region can be as low as 2% while the losses in the band bending region can contribute to 4% spin relaxation.

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K. Aulenbacher, J. Schuler, D. V. Harrach, E. Reichert, J. Roethgen, Arsen V. Subashiev, V. Tioukine, and Yuri P. Yashin "Picosecond time scale spin-polarized electron kinetics in thin semiconductor layers", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514461

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