Effect of irradiation on quantum-size layer properties grown on semi-insulating GaAs

Evgenie F. Venger; Galina N. Semenova; Yevgen Yu. Braylovsky; Stanislawa Strzelecka; Nadyezhda Ye. Korsunskaya; Wlodzimierz Strupinski; Yury G. Sadofyev; Mikhail P. Semtsiv; Murat Sharibaev

doi:10.1117/12.497257

1 April 2003 Effect of irradiation on quantum-size layer properties grown on semi-insulating GaAs

Evgenie F. Venger, Galina N. Semenova, Yevgen Yu. Braylovsky, Stanislawa Strzelecka, Nadyezhda Ye. Korsunskaya, Wlodzimierz Strupinski, Yury G. Sadofyev, Mikhail P. Semtsiv, Murat Sharibaev

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Proceedings Volume 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (2003) https://doi.org/10.1117/12.497257
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 2003, 2003, Moscow, Russian Federation

Abstract

The effect of electron (E = 1.8 MeV), γ-(⁶⁰Co) and X-ray irradiation on the structural and optical properties of a (Ga,Al)As and a (Zn,Cd)Te quantum wells (QWs) grown on semi-insulating (SI) GaAs is studied. The high radiation hardness of the A3B5 QWs (no changes in recombination characteristics) after irradiation up to a dose of approximately 2•10⁹ rad was found, while SI GaAs substrate manifested the standard effect of the charge carrier removal under such irradiation dose. A2B6 quantum-sized structures (QSS) tends to degrade under lower irradiation dose. The emission bands transformation after irradiation up to a dose ≥ 2•10⁹ rad have been observed in ZnTe buffer layer and CdZnTe QWs. The role of Cd diffusion and internal strain in radiation enhanced ternary alloys QW's degradation is discussed. The calculation of PL peak energy shift is presented in assumption of the well profile change as a result of the radiation enhanced Cd diffusion.

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Evgenie F. Venger, Galina N. Semenova, Yevgen Yu. Braylovsky, Stanislawa Strzelecka, Nadyezhda Ye. Korsunskaya, Wlodzimierz Strupinski, Yury G. Sadofyev, Mikhail P. Semtsiv, and Murat Sharibaev "Effect of irradiation on quantum-size layer properties grown on semi-insulating GaAs", Proc. SPIE 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (1 April 2003); https://doi.org/10.1117/12.497257

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KEYWORDS

Quantum wells

Gallium arsenide

X-rays

Diffusion

Cadmium

Excitons

Luminescence

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