Photostructural transformations in amorphous Ge-S thin films: a photoluminescence study

N. V. Bondar; N. A. Davydova; V. V. Tishchenko; Miroslav Vlcek

doi:10.1117/12.497289

1 April 2003 Photostructural transformations in amorphous Ge-S thin films: a photoluminescence study

N. V. Bondar, N. A. Davydova, V. V. Tishchenko, Miroslav Vlcek

Proceedings Volume 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (2003) https://doi.org/10.1117/12.497289
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 2003, 2003, Moscow, Russian Federation

Abstract

A bond-conversion model for the photostructural changes in the photoluminescence and Raman spectra is proposed. The essential role in this model belongs to lone-pair electrons of chalcogen atoms, which are optically convert into bonding ones, leading to the structure reconstruction.

Citation Download Citation

N. V. Bondar, N. A. Davydova, V. V. Tishchenko, and Miroslav Vlcek "Photostructural transformations in amorphous Ge-S thin films: a photoluminescence study", Proc. SPIE 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (1 April 2003); https://doi.org/10.1117/12.497289

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available