Industrial strength lithography APC

Christopher P. Ausschnitt; Brian Barker; William A. Muth; Marc Postiglione; Thomas Walentosky

doi:10.1117/12.485310

1 July 2003 Industrial strength lithography APC

Christopher P. Ausschnitt, Brian Barker, William A. Muth, Marc Postiglione, Thomas Walentosky

Proceedings Volume 5044, Advanced Process Control and Automation; (2003) https://doi.org/10.1117/12.485310
Event: Advanced Microelectronic Manufacturing, 2003, Santa Clara, CA, United States

Abstract

Fully automated semiconductor manufacturing, becoming a reality with the ramping of 300mm fabricators throughout the world, demands the integration of advanced process control (APC). APC is particularly critical for the lithography sector, whose performance correlates to yield and whose productivity often gates the line. We describe the implementation of a comprehensive lithography APC system at the IBM Center for Nanoelectronics, a 300mm manufacturing and development facility. The base lithography APC function encompasses closed-loop run-to-run control of exposure tool inputs to sustain the overlay and critical dimension outputs consistent with product specifications. Automation demands that no decision regarding the appropriate exposure tool run-time settings be left to human judgment. For each lot, the APC system provides optimum settings based on existing data derived from pertinent process streams. In the case where insufficient prior data exists, the APC system either invokes the appropriate combination of send ahead processing and/or pre-determined defaults. We give specific examples of the application of APC to stitched field and dose control, and quantify its technical benefits. Field matching < 0.1 ppm and critical dimension control < 2.5% is achieved among multiple exposure tools and masks.

Citation Download Citation

Christopher P. Ausschnitt, Brian Barker, William A. Muth, Marc Postiglione, and Thomas Walentosky "Industrial strength lithography APC", Proc. SPIE 5044, Advanced Process Control and Automation, (1 July 2003); https://doi.org/10.1117/12.485310

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