Paper
8 August 2003 Quenching of transient photoluminescence by strong in-plane electric fields in quantum wells
Jurgis Kundrotas, Adolfas Dargys, Steponas Asmontas, Gintaras Valusis, Klaus Koehler
Author Affiliations +
Proceedings Volume 5122, Advanced Organic and Inorganic Optical Materials; (2003) https://doi.org/10.1117/12.515799
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
Investigations of transient photoluminescence induced by external electric fields parallel to the layers of GaAs/Al0.35Ga0.65As quantum wells are reviewed. The photoluminescence was detected by time-correlated single-photon counting technique at liquid nitrogen and liquid helium temperatures applying electric fields of nanosecond duration to the wells of different width. It is shown how experimentally one can resolve between excitonic and donor impact ionization processes in combining spectral and time domains. From the study of the spectral-temporal dynamics at initial moments we have determined the coefficient of exciton impact ionization as a function of electric field for various widths of the quantum wells.
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Jurgis Kundrotas, Adolfas Dargys, Steponas Asmontas, Gintaras Valusis, and Klaus Koehler "Quenching of transient photoluminescence by strong in-plane electric fields in quantum wells", Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); https://doi.org/10.1117/12.515799
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KEYWORDS
Quantum wells

Excitons

Electrons

Luminescence

Ionization

Liquids

Nitrogen

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