Conductivity anisotropy of CdHgTe MBE layers with a periodic surface microrelief

Aleksander V. Voitsekhovskii; Andrej P. Kokhanenko; N. V. Nesterovich; Vasily S. Varavin; Sergey A. Dvoretsky; Yuri G. Sidorov; Nikolay N. Mikhailov

doi:10.1117/12.519765

22 October 2003 Conductivity anisotropy of CdHgTe MBE layers with a periodic surface microrelief

Aleksander V. Voitsekhovskii, Andrej P. Kokhanenko, N. V. Nesterovich, Vasily S. Varavin, Sergey A. Dvoretsky, Yuri G. Sidorov, Nikolay N. Mikhailov

Author Affiliations +

Proceedings Volume 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics; (2003) https://doi.org/10.1117/12.519765
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The surface microrelief of CdHgTe layers grown by molecular-beam epitaxy (MBE) method has been studied by means of atomic-force microscopy. A periodic surface microrelief in the form of an ordered system of extended waves with the characteristic period 0.1-0.2 μm has been detected on epilayers grown at increased temperatures. Angular dependencies of the conductivity at 77 K have been measured and the conductivity anisotropy has been detected with a minimum in the direction transverse to microrelief waves. A feature of the transmission system and the spectrum change after film annealing are observed. It is assumed that walls growing in the direction from the substrate to the surface are formed under microrelief waves slopes. Such structure can cause the observed feature of the transmission spectrum if the adjacent walls have different composition. In this work a calculation of spectral characteristics taking into account the influence of variable-gap composition and nonuniformity of the composition through the depth has been carried out.

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Aleksander V. Voitsekhovskii, Andrej P. Kokhanenko, N. V. Nesterovich, Vasily S. Varavin, Sergey A. Dvoretsky, Yuri G. Sidorov, and Nikolay N. Mikhailov "Conductivity anisotropy of CdHgTe MBE layers with a periodic surface microrelief", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); https://doi.org/10.1117/12.519765

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