InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor

Chin-Chuan Cheng; Shiou-Ying Cheng; Hung-Ming Chuang; Chun-Yuan Chen; Po-Hsien Lai; Chung-I Kao; Ching-Wen Hong; Chun-Wei Chen; Wen-Chau Liu

doi:10.1117/12.522021

30 March 2004 InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor

Chin-Chuan Cheng, Shiou-Ying Cheng, Hung-Ming Chuang, Chun-Yuan Chen, Po-Hsien Lai, Chung-I Kao, Ching-Wen Hong, Chun-Wei Chen, Wen-Chau Liu

Author Affiliations +

Proceedings Volume 5274, Microelectronics: Design, Technology, and Packaging; (2004) https://doi.org/10.1117/12.522021
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator," good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.

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Chin-Chuan Cheng, Shiou-Ying Cheng, Hung-Ming Chuang, Chun-Yuan Chen, Po-Hsien Lai, Chung-I Kao, Ching-Wen Hong, Chun-Wei Chen, and Wen-Chau Liu "InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor", Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, (30 March 2004); https://doi.org/10.1117/12.522021

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