Apparent positive resistance and temperature effect on I-V characteristics of RTD

Changyun Miao; Weilan Guo; Ping-Juan Niu; Hongwei Liu; Hong-Qiang Li; Dan Qu; Zhe Xu

doi:10.1117/12.522799

2 April 2004 Apparent positive resistance and temperature effect on I-V characteristics of RTD

Changyun Miao, Weilan Guo, Ping-Juan Niu, Hongwei Liu, Hong-Qiang Li, Dan Qu, Zhe Xu

Proceedings Volume 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III; (2004) https://doi.org/10.1117/12.522799
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

We have measured the I-V characteristics of the Resonant tunneling diode (RTD) fabricated by ourselves. Basing on the measured results, several questions have been analyzed and discussed: (1) Temperature effects on I-V characteristics; (2) “The Apparent positive resistance phenomena” in negative resistance region. The analysis and discussion on above questions are very useful and helpful for design and fabrication of RTD.

Citation Download Citation

Changyun Miao, Weilan Guo, Ping-Juan Niu, Hongwei Liu, Hong-Qiang Li, Dan Qu, and Zhe Xu "Apparent positive resistance and temperature effect on I-V characteristics of RTD", Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); https://doi.org/10.1117/12.522799

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